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3 edition of Development of silicon carbide semiconductor devices for high temperature applications found in the catalog.

Development of silicon carbide semiconductor devices for high temperature applications

Development of silicon carbide semiconductor devices for high temperature applications

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  • 8 Currently reading

Published by National Aeronautics and Space Administration, For sale by the National Technical Information Service in [Washington, DC], [Springfield, Va .
Written in English

    Subjects:
  • Silicon carbide.

  • Edition Notes

    StatementLawrence G. Matus and J. Anthony Powell and Jeremy B. Petit.
    SeriesNASA technical memorandum -- 104398.
    ContributionsPowell, J. Anthony., Petit, Jeremy B., United States. National Aeronautics and Space Administration.
    The Physical Object
    FormatMicroform
    Pagination1 v.
    ID Numbers
    Open LibraryOL15297404M

    Materials for High-Temperature Semiconductor Devices. Washington, DC: The National Academies Press. doi: / This book surveys the state-of-the-art for the three major wide bandgap materials (silicon carbide, nitrides, and diamond), assesses the national and international efforts to develop these materials, identifies the.   This book is intended for graduate students and researchers in crystal growth, material science, and semiconductor device technology. The book is also useful for design engineers, application 5/5(1).

    A comprehensive introduction and up-to-date reference to SiC power semiconductor devices covering topics from material properties to applications Based on a number of breakthroughs in SiC material science and fabrication - Selection from Fundamentals of Silicon Carbide Technology: Growth, Characterization, Devices and Applications [Book]. Silicon Carbide - this easy to manufacture compound of silicon and carbon is said to be THE emerging material for applications in electronics. High thermal conductivity, high electric field breakdown strength and high maximum current density make it most promising for high-powered semiconductor devices. Apart from applications in power electronics, sensors, and NEMS, .

    with over % for a V silicon MOSFET [7], and in device modeling, the inversion layer mobility in SiC may be considered constant over the temperature range of 27 °C to °C [8]. High temperature operation coupled with low loss results in high efficiency SiC devices with reduced cooling/thermal management requirements. Materials, an international, peer-reviewed Open Access journal. Dear Colleagues, As a promising wide bandgap semiconductor, Silicon Carbide (SiC) has attracted increasing attention due to the recent achievements in wafer growth technology and its outstanding materials properties such as higher values for breakdown electric field, saturation velocity and superior thermal .


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Development of silicon carbide semiconductor devices for high temperature applications Download PDF EPUB FB2

The semiconducting properties of electronic grade silicon carbide crystals, such as wide energy bandgap, make it particularly attractive for high temperature applications. Applications for high temperature electronic devices include instrumentation for engines under development, engine control and condition monitoring systems, and power conditioning and.

This book is intended for graduate students and researchers in crystal growth, material science, and semiconductor device technology. The book is also useful for design engineers, application engineers, and product managers in areas such as power supplies, converter and inverter design, electric vehicle technology, high-temperature electronics, sensors, and /5(4).

This book is intended for graduate students and researchers in crystal growth, material science, and semiconductor device technology. The book is also useful for design engineers, application engineers, and product managers in areas such as power supplies, converter and inverter design, electric vehicle technology, high-temperature electronics.

Development of silicon carbide semiconductor devices for high temperature applications Author: Lawrence G Matus ; J Anthony Powell ; Jeremy B Petit ; United States. Publisher Summary Silicon carbide (SiC) is a robust and hard material, first used as a cutting material in the nineteenth century and later as a high-temperature semiconductor for advanced applications in the twentieth century.

This chapter reviews the basic material structure of SiC and describes the various forms of SiC that are in use today. Silicon Carbide - this easy to manufacture compound of silicon and carbon is said to be THE emerging material for applications in electronics. High thermal conductivity, high electric field breakdown strength and high maximum current density make it most promising for high-powered semiconductor devices.

The properties of silicon carbide and the absence of a critical semiconductor-dielectric interface make the SiC JFET a promising device for high temperature electronics.

Silicon carbide is also used in semiconductor electronic devices operating at high temperatures and/or high voltages such as flame igniters, resistance heating, and harsh environment electronic components. Automotive uses of SiC. One of the primary uses of silicon carbide is high performance "ceramic" brake discs.

Silicon carbide SiC poses excellent electrical, mechanical, and chemical properties. Thus, devices based on silicon carbide can be used in harsh environments at high temperature and pressure.

Silicon carbide sublimes at around °C, which is much higher than the melting temperature of silicon ( °C). Silicon carbide is therefore suitable for making micromixers, which are used.

Technology focus: Silicon carbide semiconductorTODAY Compounds&AdvancedSilicon • Vol • Issue 3 • April/May 72 S ilicon carbide power devices allow us to leverage many important advantages over traditional silicon technology, which has already reachedFile Size: 1MB.

Processing and Characterization of Silicon Carbide (6H- and 4H-SiC) Contacts for High Power and High Temperature Device Applications A dissertation submitted to Kungliga Tekniska Högskolan, Stockholm, Sweden, in partial fulfillment of the requirements for the degree of Teknisk Doktor (Ph.D.).

Sang-Kwon LeeCited by: 8. A review of silicon carbide development presented an improved erosion resistance for long term use and resistance to fatigue in high-temperature conditions (Rajan et al.,). Silicon Carbide (SiC) and its polytypes, used primarily for grinding and high temperature ceramics, have been a part of human civilization for a long time.

The inherent ability of SiC devices to operate with higher efficiency and lower environmental footprint than silicon-based devices at high temperatures and under high voltages pushes SiC on the verge of becoming Cited by: Silicon carbide is mostly used for its hardness and strength, though its combined ceramic and semiconductor properties make SiC excellent in the manufacturing of fast, high-voltage, and high-temperature devices [1].

Properties of silicon carbide. Robust crystal structure. Silicon carbide is composed of light elements, silicon (Si) and carbon (C). The physical and chemical properties of wide bandgap semiconductors silicon carbide and diamond make these materials an ideal choice for device fabrication for applications in many different areas, e.g.

light emitters, high temperature and high power electronics, high power microwave devices, micro-electromechanical system (MEMS) Cited by: the fabrication of high quality devices.

Silicon carbide and diamond based electronics are at different stages of their development. An overview of the status of silicon carbide’s and diamond’s application for high temperature electronics is presented.

Silicon carbide electronics is advancing from the research stage to commercial by: In the last decade, significant effort has been expended towards the development of reliable, high-temperature integrated circuits.

Designs based on a variety of active semiconductor devices including junction field effect transistors and metal-oxide-semiconductor field effect transistors have been pursued and by: Abstract. The physical and chemical properties of wide-band-gap semiconductors make these materials an ideal choice for device fabrication for applications in many different areas, e.g.

light emitters, high-temperature and high-power electronics, high-power microwave devices, micro-electromechanical system (MEM) technology, and substrates for semiconductor preparation. Silicon carbide allows for high-temperature devices because of its wide bandgap. In ordinary silicon, high temperatures can kick electrons into the conduction band, causing errant currents to.

The silicon carbide-based semiconductor devices can be implemented in industrial and commercial motor drives, electro-mechanical computing systems, and high-temperature sensors. Thus, the increasing demand for silicon carbide-based semiconductor devices is expected to fuel the growth of the EV motor drives application at the highest CAGR.

This book is intended for graduate students and researchers in crystal growth, material science, and semiconductor device technology. The book is also useful for design engineers, application engineers, and product managers in areas such as power supplies, converter and inverter design, electric vehicle technology, high-temperature electronics, sensors, and .This book is intended for graduate students and researchers in crystal growth, material science, and semiconductor device technology.

The book is also useful for design engineers, application engineers, and product managers in areas such as power supplies, converter and inverter design, electric vehicle technology, high-temperature electronics.This book explains why SiC is so useful in electronics, gives clear guidance on the various processing steps (growth, doping, etching, contact formation, dielectrics etc) and describes how these are integrated in device manufacture.

The book should serve as an advanced tutorial and reference for those involved in applying the very latest technology emerging from university .